IRF7416 datasheet(2/8 Pages) EVVOSEMI

2 / 8 page

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Starting TJ = 25°C, L = 25mH

RG = 25Ω, IAS = -5.6A. (See Figure 12)

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Surface mounted on FR-4 board, t ≤ 10sec.

= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Total Gate Charge

–––

Qgs

Gate-to-Source Charge

–––

8.0

Qgd

Gate-to-Drain ("Miller") Charge

–––

td(on)

Turn-On Delay Time

–––

Rise Time

–––

td(off)

Turn-Off Delay Time

–––

Fall Time

–––

Ciss

Input Capacitance

–––

1700

–––

Coss

Output Capacitance

–––

890

–––

Crss

Reverse Transfer Capacitance

–––

410

–––

Diode Characteristics

Parameter

Min. Typ. Max. Units

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

–––

-1.0

trr

Reverse Recovery Time

–––

TJ = 25°C,IF = -5.6A

Qrr

Reverse Recovery Charge

–––

150

nC di/dt = 100A/μs e

Conditions

ID = -5.6A

TJ = 25°C, IS = -5.6A, VGS = 0V e

integral reverse

p-n junction diode.

Conditions

MOSFET symbol

showing the

VDS = -25V

ƒ = 1.0MHz, See Fig. 5

VGS = -10V, See Fig. 6 & 9 fÃ

VDS = -24V

VDD = -15V

ID = -5.6A

RG = 6.2Ω

RD = 2.7Ω, See Fig. 10 f

VGS = 0V

-45

–––

-3.1

Rev:2023A2

P-Channel 30 V (D-S) MOSFET

IRF7416

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