IRF7303 datasheet(1/8 Pages) EVVOSEMI

tên linh kiện	IRF7303

Giải thích chi tiết về linh kiện	Dual N-Channel MOSFET

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Description

Parameter

Max.

Units

ID @ TA = 25°C

10 Sec. Pulsed Drain Current, VGS @ 10V

5.3

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

4.9

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

3.9

IDM

Pulsed Drain Current

20

PD @TA = 25°C

Power Dissipation

2.0

W

Linear Derating Factor

0.016

W/°C

VGS

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

TJ,TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

A

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

RθJA

Maximum Junction-to-Ambient

62.5

°C/W

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IRF7303

Rev:2023A2

1

D1

D2

G1

S2

G2

S1

8

1

2

3

4

5

6

7

SOP-8

Generation VTechnology

Ultra Low On-Resistance

Dual N-Channel MOSFET

Surface Mount

Dynamic dv/dt Rating

Fast Switching

Lead-Free

VDS (V) = 30V

ID = 5.3 A

RDS(ON)

50m

(VGS = -10V)

RDS(ON)

80m (VGS = -4.5V)

Features

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The SOP-8 has been modied through a customizec

leadframe for enhanced thermal characteristics and

multiple die capability making it ideal in a variety of

power applications.

With these improvements. multiple devices can be

used in an application with dramatically reduced board

space.

The package is designed for vapor phase. intra red. or

wave soldering techniques. Power dissipation of gre-

ater than 0.8W is possible in a typical PCB mount app-

lication.

Số phần tương tự - IRF7303

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRF7303	111Kb / 9P	Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)
International Rectifier	IRF7303	113Kb / 9P	Generation V Technology
Kersemi Electronic Co.,...	IRF7303	780Kb / 9P	Generation V Technology
Guangdong Youtai Semico...	IRF7303	446Kb / 8P	Dual N-Channel MOSFET
International Rectifier	IRF7303PBF	230Kb / 9P	HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050廓 )

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Mô tả tương tự - IRF7303

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