GaAs SPDT Switch

0.05 - 3 GHz

MASWSS0176

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whatsoever arising out of the use or application of any product(s) or

information.

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V1

2

RoHS

Compliant

3,4

Parameter

Test Conditions

Units

Min

Typ

Max

Insertion Loss

0.05 - 1.0 GHz

1.0 - 3.0 GHz

dB

dB

—

—

0.3

0.35

0.4

0.55

Isolation

0.05 - 1.0 GHz

1.0 - 3.0 GHz

dB

dB

20

—

24

21

—

—

Return Loss

0.05 - 3.0 GHz

dB

—

20

—

IP2

Two Tone +5 dBm, 5 MHz Spacing

dBm

—

62

—

IP3

Two Tone +5 dBm, 5 MHz Spacing

dBm

—

45

—

P1dB

—

dBm

—

21

—

Trise, Tfall

10% to 90% RF and 90% to 10% RF

nS

—

35

—

Ton, Toff

50% Vc to 10% RF, 50% Vc to 90% RF

nS

—

40

—

Transients

In-Band

mV

—

10

—

Control Current

Vc = 2.5 V

µA

—

5

20

3. For positive voltage control, external DC blocking capacitors are required on all RF ports.

4. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 1 GHz, 39 pF for 0.5 GHz - 3 GHz.

†

Reference Application Note M538 for lead-free solder reflow

recommendations.

Control

V1

Control

V2

RFC-RF1

RFC-RF2

0

1

On

Off

1

0

Off

On

5. 0 = 0 V to 0.2 V, 1 = +2.5 V to 5 V

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.