Philips Semiconductors

Product specification

Logic level TOPFET

PIP3119-P

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DS

Continuous drain source voltage

1

-50

V

I

D

Continuous drain current

V

-

self -

A

limited

I

D

Continuous drain current

V

-

20

A

I

I

Continuous input current

-5

5

mA

I

IRM

Repetitive peak input current

δ ≤ 0.1, tp = 300 µs

-50

50

mA

P

D

Total power dissipation

T

-

90

W

T

stg

Storage temperature

-55

175

˚C

T

j

Continuous junction temperature

2

normal operation

-

150

˚C

T

sold

Lead temperature

during soldering

-

260

˚C

ESD LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

C

Electrostatic discharge capacitor

Human body model;

-

2

kV

voltage

C = 250 pF; R = 1.5 k

Ω

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Inductive load turn-off

I

E

DSM

Non-repetitive clamping energy

T

-

350

mJ

E

DRM

Repetitive clamping energy

T

-

45

mJ

OVERLOAD PROTECTION LIMITING VALUE

With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload

- overtemperature and short circuit load.

SYMBOL

PARAMETER

REQUIRED CONDITION

MIN.

MAX.

UNIT

V

DS

Drain source voltage

3

4 V

≤ V

0

35

V

THERMAL CHARACTERISTIC

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Thermal resistance

R

th j-mb

Junction to mounting base

-

-

1.25

1.39

K/W

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.

2 A higher T

3 All control logic and protection functions are disabled during conduction of the source drain diode.

May 2001

2

Rev 1.000