PHT6N03T datasheet(4/10 Pages) PHILIPS

4 / 10 page

Philips Semiconductors

Product specification

TrenchMOS

™ transistor

PHT6N03T

Standard level FET

Fig.1. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25 ˚C = f(Tmb)

Fig.2. Normalised continuous drain current.

ID% = 100

⋅I

D/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V

Fig.3. Safe operating area. T

mb = 25 ˚C

D & IDM = f(VDS); IDM single pulse; parameter tp

Fig.4. Transient thermal impedance.

th j-mb = f(t); parameter D = tp/T

Fig.5. Typical output characteristics, T

j = 25 ˚C.

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance, T

j = 25 ˚C.

DS(ON) = f(ID); parameter VGS

100

120

140

Tmb / C

PD%

Normalised Power Derating

120

110

100

1E-07

1E-05

1E-03

1E-01

1E+01

1E+03

BUKX83

t / s

Zth j-amb / (K/W)

1E+02

1E+01

1E+00

1E-01

1E-02

0.5

0.2

0.1

0.05

0.02

D =

100

120

140

Tmb / C

ID%

Normalised Current Derating

120

110

100

02468

BUK7830-30

VDS / V

ID / A

4.5

5.5

6.5

VGS / V =

0.1

100

1000

0.01

0.1

100

7830-30

VDS / V

ID / A

RDS(ON)

VDS

/ ID

tp = 10 us

100 us

1 ms

10 ms

100 ms

1020

30405060

7830-30

ID / A

RDS(ON) / mOhm

VGS / V =

6.5

November 1997

Rev 1.200

PHT6N03T bảng dữ liệu(PDF) 4 Page - NXP Semiconductors

PHT6N03T bảng dữ liệu(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10

bảng dữ liệu tải về

Link URL