PHP3N60E datasheet(1/9 Pages) PHILIPS

tên linh kiện	PHP3N60E

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Philips Semiconductors

Product specification

PowerMOS transistors

PHP3N60E, PHB3N60E

Avalanche energy rated

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching

V

DSS = 600 V

• Stable off-state characteristics

• High thermal cycling performance

I

D = 2.8 A

• Low thermal resistance

R

DS(ON) ≤ 4.4 Ω

GENERAL DESCRIPTION

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,

T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching

applications.

The PHP3N60E is supplied in the SOT78 (TO220AB) conventional leaded package.

The PHB3N60E is supplied in the SOT404 surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404

DESCRIPTION

1

gate

2

drain

1

3

source

tab

drain

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DSS

Drain-source voltage

T

j = 25 ˚C to 150˚C

-

600

V

DGR

Drain-gate voltage

T

j = 25 ˚C to 150˚C; RGS = 20 kΩ

-

600

V

GS

Gate-source voltage

-

± 30

V

I

D

Continuous drain current

T

mb =

25 ˚C; V

GS = 10 V

-

2.8

A

T

mb = 100 ˚C; VGS = 10 V

-

1.8

A

I

DM

Pulsed drain current

T

mb = 25 ˚C

-

11

A

P

D

Total dissipation

T

mb = 25 ˚C

-

83

W

T

j, Tstg

Operating junction and

- 55

150

˚C

storage temperature range

d

g

s

12 3

tab

13

tab

2

December 1998

1

Rev 1.200

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