Silicon NPN Power Transistor

2SC3474

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V (BR)CEO

Collector-Emitter Breakdown Voltage

IC= 10mA, IB=0A

80

--

--

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 0.3A; IB= 1mA

--

--

0.5

V

VBE(sat)

Base-emitter saturation voltage

IC= 0.3A; IB= 1mA

--

--

1.1

V

ICBO

Collector Cutoff Current

VCB= 80V; IE= 0A

--

--

1

uA

IEBO

Emitter cut-off current

VEB= 7V; IC= 0A

--

--

1

uA

hFE

DC Current Gain

IC= 0.4A; VCE= 1V

500

--

--

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