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MRF1570T1 bảng dữ liệu(PDF) 1 Page - Freescale Semiconductor, Inc |
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MRF1570T1 bảng dữ liệu(HTML) 1 Page - Freescale Semiconductor, Inc |
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1 / 20 page ![]() Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. MRF1570T1 MRF1570FT1 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen- cies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applica- tions in 12.5 volt mobile FM equipment. • Specified Performance @ 470 MHz, 12.5 Volts Output Power — 70 Watts Power Gain — 10 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • Broadband -Full Power Across the Band: 135-175 MHz 400-470 MHz • Broadband Demonstration Amplifier Information Available Upon Request • 200_C Capable Plastic Package • Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS +0.5, +40 Vdc Gate-Source Voltage VGS ± 20 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 165 0.5 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Table 2. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to Case RθJC 0.75 °C/W Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-020 1 260 °C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Document Number: MRF1570T1 Rev. 6, 5/2006 Freescale Semiconductor Technical Data 470 MHz, 70 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 1366-04, STYLE 1 TO-272-8 WRAP PLASTIC MRF1570T1 MRF1570T1 MRF1570FT1 CASE 1366A-02, STYLE 1 TO-272-8 PLASTIC MRF1570FT1 © Freescale Semiconductor, Inc., 2006. All rights reserved. |
Số phần tương tự - MRF1570T1 |
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Mô tả tương tự - MRF1570T1 |
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