M29F800DB datasheet(43/53 Pages) STMICROELECTRONICS

43 / 53 page

M29F800DT

Common Flash Interface (CFI)

43/53

Table 22.

CFI Query Identification String(1)

Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.

Address

Data

Description

Value

x16

10h

20h

0051h

"Q"

11h

22h

0052h

Query Unique ASCII String "QRY"

"R"

12h

24h

0059h

"Y"

13h

26h

0002h

Primary Algorithm Command Set and Control Interface ID

code 16 bit ID code defining a specific algorithm

AMD

Compatible

14h

28h

0000h

15h

2Ah

0040h

Address for Primary Algorithm extended Query table (see

Table 24)

P = 40h

16h

2Ch

0000h

17h

2Eh

0000h

Alternate Vendor Command Set and Control Interface ID

Code second vendor - specified algorithm supported

18h

30h

0000h

19h

32h

0000h

Address for Alternate Algorithm extended Query table

1Ah

34h

0000h

Table 23.

CFI Query System Interface Information

Address

Data

Description

Value

x16

1Bh

36h

0045h

VCC Logic Supply Minimum Program/Erase voltage

bit 7 to 4BCD value in volts

bit 3 to 0BCD value in 100 mV

4.5V

1Ch

38h

0055h

VCC Logic Supply Maximum Program/Erase voltage

bit 7 to 4BCD value in volts

bit 3 to 0BCD value in 100 mV

5.5V

1Dh

3Ah

0000h VPP [Programming] Supply Minimum Program/Erase voltage

1Eh

3Ch

0000h VPP [Programming] Supply Maximum Program/Erase voltage

1Fh

3Eh

0004h Typical timeout per single byte/word program = 2n µs

16µs

20h

40h

0000h Typical timeout for minimum size write buffer program = 2n µs

21h

42h

000Ah Typical timeout per individual block erase = 2n ms

22h

44h

0000h Typical timeout for full chip erase = 2n ms

see note(1)

Not supported in the CFI

23h

46h

0004h Maximum timeout for byte/word program = 2n times typical

256µs

24h

48h

0000h Maximum timeout for write buffer program = 2n times typical

25h

4Ah

0003h Maximum timeout per individual block erase = 2n times typical

26h

4Ch

0000h Maximum timeout for chip erase = 2n times typical

see note(1)

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