S3D08065M datasheet(2/6 Pages) SMCDIODE

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Technical Data

Data Sheet N2513, REV.-



China - Germany - Korea - Singapore - United States 



http://www.smc-diodes.com - sales@ smc-diodes.com 

S3D08065M

* Pulse width < 300 µs, duty cycle < 2%

Maximum Ratings

Characteristics

Symbol

Condition

Max.

Units

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VDC

650

Average Rectified Forward Current

IF (AV)1

@Tc=25°C

IF (AV)2

@Tc=153°C

Repetitive Peak Forward Surge Current

IFRM1

10ms, Half Sine pulse, TC =25°C

37.5

IFRM2

10ms, Half Sine pulse, TC =110°C

25.5

Peak One Cycle Non-Repetitive Surge Current

IFSM1

10ms, Half Sine pulse, TC =25°C

IFSM2

10ms, Half Sine pulse, TC =110°C

Non-Repetitive Peak Forward Surge Current

IF,Max1

10μs. Pulse, TC =25℃

650

IF,Max2

10μs. Pulse, TC =110℃

530

Power Dissipation

Ptot1

TJ =25℃

79.0

Ptot2

TJ =110℃

34.2

Electrical Characteristics:

Characteristics

Symbol

Condition

Typ.

Max. Units

Forward Voltage Drop*

VF1

@ 8A, Pulse, TJ = 25 C

1.4

1.7

VF2

@ 8A, Pulse, TJ = 175 C

1.7

2.4

Reverse Current*

IR1

@VR = rated VR

TJ = 25 C

IR2

@VR = rated VR

TJ = 175 C

200

Junction Capacitance

VR=0V, Tj=25℃,f=1MHz

650

Reverse Recovery Charge

IF = 8A, di/dt = 500A/μs

VR = 400 V, TJ =25°C

40.55

Capacitance Stored Energy

VR = 400 V

9.93

μJ

Characteristics

Symbol

Condition

Specification Units

Junction Temperature

-55 to +175



Storage Temperature

Tstg

-55 to +175



Typical Thermal Resistance Junction to Case

RJC

DC operation

1.9



C/W

Thermal-Mechanical Specifications:

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