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PJS6602 bảng dữ liệu(PDF) 2 Page - Pan Jit International Inc.

tên linh kiện PJS6602
Giải thích chi tiết về linh kiện  20V Complementary Enhancement Mode MOSFET
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PJS6602 bảng dữ liệu(HTML) 2 Page - Pan Jit International Inc.

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PJS6602
January 20,2022
PJS6602-REV.02
Page 2
N-Channel Electrical Characteristics (TA=25
o
C unless otherwise noted)
NOTES :
1.
Pulse width<300us, Duty cycle<2%
2.
Essentially independent of operating temperature typical characteristics.
3.
RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4.
The maximum current rating is package limited.
5.
Guaranteed by design, not subject to production testing
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
20
-
-
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
0.5
0.77
1.2
V
Drain-Source On-State Resistance
RDS(on)
VGS=4.5V, ID=5.2A
-
29
36
m
Ω
VGS=2.5V, ID=3.2A
-
39
52
VGS=1.8V, ID=1.5A
-
58
92
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
-
-
1
uA
Gate-Source Leakage Current
IGSS
VGS=+12V, VDS=0V
-
-
+100
nA
Dynamic(Note 5)
Total Gate Charge
Qg
VDS=10V, ID=5.2A,
VGS=4.5V(Note 1,2)
-
4.1
-
nC
Gate-Source Charge
Qgs
-
1.1
-
Gate-Drain Charge
Qgd
-
0.7
-
Input Capacitance
Ciss
VDS=10V, VGS=0V,
f=1.0MHZ
-
396
-
pF
Output Capacitance
Coss
-
54
-
Reverse Transfer Capacitance
Crss
-
40
-
Turn-On Delay Time
td(on)
VDD=10V, ID=5.2A,
VGS=4.5V,
RG=6
Ω(Note 1,2)
-
14
-
ns
Turn-On Rise Time
tr
-
10
-
Turn-Off Delay Time
td(off)
-
30
-
Turn-Off Fall Time
tf
-
7
-
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
IS
---
-
-
1.5
A
Diode Forward Voltage
VSD
IS=1.0A, VGS=0V
-
0.75
1.2
V



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