Analog Power

AM4563C

N & P-Channel 60-V (D-S) MOSFET

VDS (V)

ID (A)

5.0

4.7

-4.5

-4.0

Symbol

Nch Limit Pch Limit

Units

VDS

60

-60

VGS

±20

±20

TA=25°C

5.0

-4.5

TA=70°C

3.9

-3.9

IDM

20

-20

IS

2.8

-2.5

A

TA=25°C

2.1

2.1

TA=70°C

1.3

1.3

TJ, Tstg

°C

Symbol

Maximum

Units

62.5

110

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

60

68 @ VGS = -10V

88 @ VGS = -4.5V

PRODUCT SUMMARY

rDS(on) (mΩ)

56 @ VGS = 10V

64 @ VGS = 4.5V

-60

Parameter

Drain-Source Voltage

Gate-Source Voltage

ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)

t <= 10 sec

Maximum Junction-to-Ambient

a

Steady State

RθJA

A

W

°C/W

Parameter

THERMAL RESISTANCE RATINGS

Continuous Drain Current

a

ID

Power Dissipation

a

PD

Pulsed Drain Current

b

Continuous Source Current (Diode Conduction)

a

Operating Junction and Storage Temperature Range

-55 to 150

V

Key Features:

• Low rDS(on) trench technology

• Low thermal impedance

• Fast switching speed

Typical Applications:

• DC/DC Conversion Circuits

• Motor Drives

SO-8

© Preliminary

1

Publication Order Number:

DS_AM4563C_1A