www.basicsemi.com

12/19

Rev.0.1

Single-ChannelIsolatedGateDriver

BTD5350

9.4.3Short-CircuitClamping

In short-circuit conditions, the gate voltage of the power devices tend to rise, so the short-circuit clamping function

is used to clamp its gate voltage. The short-circuit clamping function helps protect the IGBT or MOSFET gates

from overvoltage breakdown or degradation. The short circuit clamping function is implemented by adding a

diode between the OUT, OUTL or CLAMP pins and the VCC2 pins inside the driver. The internal diode can carry a

current up to 500mA for 10µs or a continuous current of 20mA. Use external Schottky diodes to improve current

conduction capability as needed.

9.4.4ActivePull-Down

The active pull-down function is used to pull the IGBT or MOSFET gate to the low state when no power is connected to

the VCC2. This feature prevents false IGBT and MOSFET turn-on on the OUT, OUTL and CLAMP pins by clamping the out-

put to approximately 2V.

9.5ESDStructure

The figure below shows the ESD-protected diode configuration of the input and output pins.

Figure10.ESDStructureDiagram

9.6TruthTable

6

7

5

1

3

2

4

8

18V

35V

IN+

IN-

OUTH

OUTL

GND1

VEE2

VCC1

VCC2

5.5V

IN+

IN-

VCC1 VCC2 OUTH OUTL

X

X

<UVLO

X

Hi-Z

L

X

X

X

<UVLO Hi-Z

L

H

L

>UVLO >UVLO

H

Hi-Z

H

H

>UVLO >UVLO Hi-Z

L

L

L

>UVLO >UVLO Hi-Z

L

L

H

>UVLO >UVLO Hi-Z

L

BTD5350S

IN+

IN-

VCC1 VCC2 OUT

X

X

<UVLO

X

L

X

X

X

<UVLO

L

H

L

>UVLO >UVLO

H

H

H

>UVLO >UVLO

L

L

L

>UVLO >UVLO

L

L

H

>UVLO >UVLO

L

BTD5350MandBTD5350E