TPCT4204 datasheet(3/4 Pages) TOSHIBA

3 / 4 page

TPCT4204

2004-11-09

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VSS = 0 V

(Note 8)



±10

µA

Source cut-OFF current

ISSS

VSS = 30 V, VGS = 0 V

(Note 8)



µA

V (BR) SSS

IS = 10 mA, VGS = 0 V

(Note 8)



Drain-source breakdown voltage

V (BR) SSX

IS = 10 mA, VGS = −12 V (Note 8)



Gate threshold voltage

Vth

VSS = 10 V, IS = 200 µA (Note 8)

0.5



1.2

VGS = 2.5 V, IS = 3 A

(Note 7)

(24)

(33)

(44)

VGS = 4.0 V, IS = 3 A

(Note 7)

(18.5)

(23)

(29.5)

Drain-source ON resistance

RSS (ON)

VGS = 4.5 V, IS = 3 A

(Note 7)

(17.5)

(22)

(28)

Ω

Forward transfer admittance

|Yfs|

VSS = 10 V, IS = 3 A

(Note 8)

(12.5)

(25)



Input capacitance

Ciss



(1990)



Reverse transfer capacitance

Crss



(150)



Output capacitance

Coss

VSS = 10 V, VGS = 0 V, f = 1 MHz

(Note 8)



(210)



Rise time



TBD



Turn-on time

ton



TBD



Fall time



TBD



Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 µs (Note 8)



TBD



Total gate charge



TBD



Gate-source charge1

Qgs1

VSS ∼− 24 V, VGS = 5 V, IS = 6 A

(Note 8)



TBD



Diode (source-source) forward voltage

VSSF

ISR = 6 A, VGS = 0 V

(Note 9)



−1.2

TENTATIVE

VSS ∼− 15 V

0 V

VGS

5 V

IS = 3 A

VOUT

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