Analog Power

AMIFPC60LC

N-Channel 600-V (D-S) MOSFET

VDS (V)

ID (A)

600

30

Symbol

Limit

Units

VDS

600

VGS

±30

Continuous Drain Current

a

TC=25°C

ID

30

IDM

120

TC=25°C

IS

30

A

Power Dissipation

a

TC=25°C

PD

500

W

TJ, Tstg

-55 to 175

°C

Symbol

Maximum

Units

RθJA

40

RθJC

0.29

Notes

a.

Package Limited

b.

Pulse width limited by maximum junction temperature

c.

Surface Mounted on 1” x 1” FR4 Board.

Pulsed Drain Current

b

THERMAL RESISTANCE RATINGS

°C/W

Parameter

Operating Junction and Storage Temperature Range

ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)

V

Parameter

Drain-Source Voltage

Maximum Junction-to-Ambient

c

Maximum Junction-to-Case

Continuous Source Current (Diode Conduction)

a

Gate-Source Voltage

PRODUCT SUMMARY

rDS(on) (mΩ)

360 @ VGS = 10V

A

Key Features:

• Low rDS(on) trench technology

• Low thermal impedance

• Fast switching speed

Typical Applications:

• Power Supplies

• Motor Drives

• Consumer Electronics

© Preliminary

1

Publication Order Number:

DS_AMIFPC60LC_1A