Analog Power

AMIFB4115

N-Channel 150-V (D-S) MOSFET

VDS (V)

ID (A)

150

125

Symbol

Limit

Units

VDS

150

VGS

±20

Continuous Drain Current

a

TC=25°C

ID

125

IDM

500

TC=25°C

IS

125

A

Power Dissipation

a

TC=25°C

PD

300

W

TJ, Tstg

-55 to 175

°C

Symbol

Maximum

Units

RθJA

62.5

RθJC

0.5

Notes

a.

Package Limited

b.

Pulse width limited by maximum junction temperature

c.

Surface Mounted on 1” x 1” FR4 Board.

Gate-Source Voltage

PRODUCT SUMMARY

rDS(on) (mΩ)

12.5 @ VGS = 10V

Pulsed Drain Current

b

THERMAL RESISTANCE RATINGS

°C/W

Parameter

Operating Junction and Storage Temperature Range

ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)

V

Parameter

Drain-Source Voltage

A

Maximum Junction-to-Ambient

c

Maximum Junction-to-Case

Continuous Source Current (Diode Conduction)

a

Key Features:

• Low rDS(on) trench technology

• Low thermal impedance

• Fast switching speed

Typical Applications:

• LED Inverter Circuits

• Inrush Limiter and Hot Swap Circuits

• 48V-Input DC/DC Conversion Circuits

DRAIN

connected

to TAB

© Preliminary

1

Publication Order Number:

DS_AMIFB4115_1A