PEMB2 datasheet(4/8 Pages) PHILIPS

tên linh kiện	PEMB2

Giải thích chi tiết về linh kiện	PNP resistor-equipped double transistor R1 = 47 kohm, R2 = 47 kohm

PDF	8 Pages

Scroll/Zoom	100%

nhà sản xuất	PHILIPS [NXP Semiconductors]

Trang chủ	http://www.nxp.com

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4 / 8 page

2001 Sep 14

Philips Semiconductors

Product speciﬁcation

PNP resistor-equipped double transistor

R1=47k

Ω,R2=47 kΩ

PEMB2

THERMAL CHARACTERISTICS

Notes

1. Transistor mounted on an FR4 printed-circuit board.

2. The only recommended soldering method is reflow soldering.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1and 2

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector cut-off current

IE = 0; VCB = −50 V

−−−100

ICEO

collector cut-off current

IB = 0; VCE = −50 V

−−−1

µA

IB = 0; VCE = −30 V; Tj = 150 °C

−−−50

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−90

µA

hFE

DC current gain

IC = −5 mA; VCE = −5V

−−

VCEsat

collector-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA

−−−150

Vi(off)

input-off voltage

IC = −100 µA; VCE = −5V

−

1.2

0.8

Vi(on)

input-on voltage

IC = −2 mA; VCE = −0.3 V

1.6

−

input resistor

Ω

resistor ratio

0.8

1.2

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−−

3pF

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