FCD2004K datasheet(2/5 Pages) GWSEMI

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Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

STATIC PARAMETERS

Drain-source breakdown voltage

V (BR) DSS

VGS = 0V, ID =250µA

Zero gate voltage drain current

IDSS

VDS =16V,VGS = 0V

µA

Gate-body leakage current

IGSS

VGS =±4.5V, VDS = 0V

±1

µA

VGS =±8V, VDS = 0V

±10

µA

Gate threshold voltage (note 1)

VGS(th)

VDS =VGS, ID =250µA

0.4

Drain-source on-resistance (note 1)

RDS(on)

6.0

9.0

Ω

VGS =4.0V, ID =3A

9.3

mΩ

VGS =3.8V, ID =3A

9.7

mΩ

VGS =3.1V, ID =3A

10.5

mΩ

VGS =2.5V, ID =3A

12.5

mΩ

Forward tranconductance (note 1)

gFS

VDS =5V, ID =7A

Diode forward voltage(note 1)

VSD

IS=1A, VGS = 0V

DYNAMIC PARAMETERS (note 2)

Input Capacitance

Ciss

VDS =10V,VGS =0V,f =1MHz

7.6

Output Capacitance

Coss

250

Reverse Transfer Capacitance

Crss

210

Total gate charge

VDS =10V,VGS =4.5V,ID =7A

Gate-source charge

Qgs

2.0

Gate-drain charge

Qgd

5.1

SWITCHING PARAMETERS(note 2)

Turn-on delay time

td(on)

VGS=5V,VDD=10V,

RL=1.35Ω,RGEN=3Ω

2.2

Turn-on rise time

5.9

Turn-off delay time

td(off)

Turn-off fall time

Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%.

2. Guaranteed by design, not subject to production testing.

MOSFET ELECTRICAL CHARACTERISTICS T =25 ℃ unless otherwise specified

7.3

7.8

8.2

9.0

1950

VGS =4.5V, ID =3A

6.3

6.5

7.0

7.5

Drain-Source Diode Characteristics

Diode Forward Current

6.0

FCD2004K

Dual N-Channel MOSFET

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