Symbol

Parameter

Condition

Min

Typ

Max

Unit

Static Parameters

BVSSS

Source to Source Breakdown Voltage

,VGS=0V

12

V

ISSS

Zero-Gate Voltage Source Current

VSS=10V,VGS=0V

μA

IGSS

Gate to Source Leakage Current

VSS=0V, VGS= ±8V

±10

μA

VTH

Gate to Source Threshold Voltage

VSS=10V, IS=1.11mA

VGS=4.5V,IS=3A

2.4

mΩ

RSS(on)

Source to Source On-state

Resistance

mΩ

td(on)

Turn-on Delay Time

tr

Turn-on Rise Time

td(off)

Turn-off Delay Time

tf

Turn-off Fall Time

VSS=10V,IS=6A,VGS=4.5V

VF(S-S)

Diode Forward Voltage

VGS=0V,IS=6A

1.3

V

MOSFET ELECTRICAL CHARACTERISTICS

IS=1mA

2.

1

mΩ

μS

μS

μS

μS

0.

75

2.0

2.5

8

3.5

17.5

mΩ

VDD=10V,RL=3.3Ω VGS=4.5V

1.0

1.1

1.

3

1.

6

2.8

6.15

2.9

2.

8

V

1

a

T =25 ℃ unless otherwise specified

VGS=3.8V,IS=3A

VGS=3.1V,IS=3A

VGS=2.5V,IS=3A

Notes: 1.Mounted on FR4 board (25.4mm25.4mmt1.0mm) using the minimum recommended pad size (36um Copper ).

G2

D2

S2

G1

D1

S1

VDD=10V

IS=3A

RL=3.3

Vout

Vin

PW=100

μS

Ω

D=1%

10 %

90 %

90 %

10 %

90 %

10 %

td(on) tr

td(off)

tf

Vin

Vout

4.5V

2.t = 10 ms , Duty Cycle = 1 %.

3.When FET1 is measured,G2 and S2 are short-circuited.

4.When FET1 is measured, FET2 is biased with VG2S2=4.5V.

0.35

1.4

4.0

④

Ciss

Input Capacitance

Coss

Output Cpacitance

Crss

Reverse Transfer Capacitance

pF

pF

pF

1560

620

261

VSS=10V,VGS=0V, f=100kHz

Qg

Gate1-source1 charge

Gate1-source2 charge

Total gate charge

nC

nC

nC

32.5

4.8

1.4

③

③

③

③

③

Qg1s1

Qg1s2

③

③

F8208SPK

Dual N-Channel MOSFET