PDTA143ES datasheet(4/8 Pages) PHILIPS

4 / 8 page

1998 May 18

Philips Semiconductors

Product speciﬁcation

PNP resistor-equipped transistor

PDTA143ES

Fig.3

DC current gain as a function of collector

current; typical values.

VCE = −5V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

MBK794

−10−1

−1

−10

−102

IC (mA)

hFE

103

102

(1)

(2)

(3)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

MBK793

−1

−10

−102

−1

(2)

(3)

(1)

−10−1

−10−2

IC (mA)

VCEsat

(V)

Fig.5

Input-off voltage as a function of collector

current; typical values.

VCE = −5V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

−10

(2)

(3)

(1)

−1

−10−1

MBK796

−10−2

−10−1

−1

−10

IC (mA)

Vi(off)

(V)

Fig.6

Input-on voltage as a function of collector

current; typical values.

VCE = −0.3 V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

−102

−1

−10

−10−1

MBK795

−10−1

−1

−10

−102

IC (mA)

Vi(on)

(V)

(1) (2) (3)

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