9NM60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 9

www.unisonic.com.tw

QW-R205-081.I



ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

V

Gate-Source Voltage

VGSS

±30

V

Drain Current

Continuous

ID

9

A

Pulsed (Note 2)

IDM

18

A

Avalanche Current

IAR

2.2

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

323

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

6

V/ns

Power Dissipation

TO-220/TO-220WF

TO-263

PD

82

W

TO-220F/TO-220F1

TO-220F2

28

W

TO-251/TO-252

TO-252D

58

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L=100mH, IAS=2.54A, VDD=50V, RG=25Ω, Starting TJ=25°C

4. ISD ≤ 9.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ=25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220WF/TO-263

θJA

62.5

°С/W

TO-251/TO-252

TO-252D

110

°С/W

Junction to Case

TO-220/TO-220WF

TO-263

θJC

1.52

°С/W

TO-220F/TO-220F1

TO-220F2

4.46

°С/W

TO-251/TO-252

TO-252D

2.15 (Note)

°С/W

Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.