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APT50M85B2VR bảng dữ liệu(PDF) 4 Page - Advanced Power Technology

tên linh kiện APT50M85B2VR
Giải thích chi tiết về linh kiện  POWER MOS V MOSFET
PDF  4 Pages
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nhà sản xuất  ADPOW [Advanced Power Technology]
Trang chủ  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT50M85B2VR bảng dữ liệu(HTML) 4 Page - Advanced Power Technology

  APT50M85B2VR Datasheet HTML 1Page - Advanced Power Technology APT50M85B2VR Datasheet HTML 2Page - Advanced Power Technology APT50M85B2VR Datasheet HTML 3Page - Advanced Power Technology APT50M85B2VR Datasheet HTML 4Page - Advanced Power Technology  
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APT50M85B2VR_LVR
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline (B2VR)
TO-264 (L) Package Outline (LVR)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
1
10
100
500
0
10
20
30
40
50
0
100
200
300
400
500
600
0.3
0.5
0.7
0.9
1.1
1.3
1.5
224
100
50
10
5
1
16
12
8
4
0
10mS
1mS
100µS
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
TJ=+150°C
TJ=+25°C
Crss
Ciss
Coss
30,000
10,000
1,000
100
200
100
10
1
VDS=250V
VDS=100V
VDS=400V
I
D = 56A



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