APT15DQ100BCT(G)

New Diode Data Sheet By Darel Bidwell

DYNAMIC CHARACTERISTICS

MIN

TYP

MAX

-

20

-

235

-

185

-

3

-

-

300

-

810

-

6

-

-

125

-

1150

-

19

UNIT

ns

nC

Amps

ns

nC

Amps

ns

nC

Amps

Characteristic

Reverse Recovery Time

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Symbol

t

rr

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

Test Conditions

I

V

I

V

I

V

I

1.0

RECTANGULAR PULSE DURATION (seconds)

FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

1.20

1.00

0.80

0.60

0.40

0.20

0

0.5

SINGLE PULSE

0.1

0.3

0.7

0.05

FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL

Peak TJ = PDM x ZθJC + TC

Duty Factor D =

t2

t1

Note:

THERMAL AND MECHANICAL CHARACTERISTICS

Characteristic / Test Conditions

Junction-to-Case Thermal Resistance

Package Weight

Maximum Mounting Torque

Symbol

W

T

Torque

MIN

TYP

MAX

1.18

0.22

5.9

10

1.1

UNIT

°C/W

oz

g

lb•in

N•m

D = 0.9

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

0.676

0.504

0.00147

0.0440

Dissipated Power

(Watts)

Z

impedances: Case to sink,

sink to ambient, etc. Set to

zero when modeling only

the case to junction.