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AS5LC1008DCJ-10/XT bảng dữ liệu(PDF) 2 Page - Austin Semiconductor |
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AS5LC1008DCJ-10/XT bảng dữ liệu(HTML) 2 Page - Austin Semiconductor |
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2 / 10 page ![]() SRAM SRAM SRAM SRAM SRAM AS5LC1008 Austin Semiconductor, Inc. AS5LC1008 Rev. 1.0 11/02 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 ABSOLUTE MAXIMUM RATINGS* Terminal Voltage with Respect to GND (V TERM )...........................................................................................-0.5V to V CC + 0.5V Temperature Under Bias (T BIAS ).............................................................................................................................-55°C to +125°C Storage Temperature (T STG )....................................................................................................................................-65°C to +150°C Power Dissipation (P T )................................................................................................................................................................1.0W *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. FUNCTIONAL BLOCK DIAGRAM TRUTH TABLE Mode WE\ CE\ OE\ I/O Operation VCC Current Not Selected (Power-down) X H X High-Z ISB1, ISB2 Output Disabled H L H High-Z ICC1, ICC2 Read H L L DOUT ICC1, ICC2 Write L L X DIN ICC1, ICC2 A0 - A16 VCC GND I/O0 - I/O7 CE\ OE\ WE\ DECODER 128K x 8 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O CONTROL CIRCUIT |
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