DRAM

DRAM

DRAM

DRAM

DRAM

AS4LC4M16

Austin Semiconductor, Inc.

AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.

7

AS4LC4M16

Rev. 1.0 7/02

*Stresses greater than those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

these or any other conditions above those indicated in the

operation section of this specification is not implied. Exposure

to absolute maximum rating conditions for extended periods

may affect reliability.

ABSOLUTE MAXIMUM RATINGS*

Voltage on V

CC

Relative to V

SS

.......................................-1V to +4.6V

Voltage on NC, Inputs or I/O Pins

Relative to V

SS

...................................................-1V to +4.6V

Power Dissipation...........................................................................1W

Operating temperature range, T

A

(ambient)..............-55°C to 125°C

Storage temperature (plastic)......................................-55°C to 150°C

(V

CC

= +3.3V ±0.3V)

PARAMETERS

SYM

MIN

MAX

UNITS

NOTES

SUPPLY VOLTAGE

3

3.6

V

INPUT HIGH VOLTAGE:

Valid Logic 1; All inputs, I/Os and any NC

V

35

INPUT LOW VOLTAGE:

Valid Logic 0; All inputs, I/Os and any NC

-0.3

0.8

V

35

INPUT LEAKAGE CURRENT:

All other pins not under test = 0V

-2

2

µA

36

OUTPUT LEAKAGE CURRENT:

DQ is disabled and in High-Z state

-5

5

µA

OUTPUT HIGH VOLTAGE:

2.4

---

V

OUTPUT LOW VOLTAGE:

---

0.4

V