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IRF2805LPBF bảng dữ liệu(PDF) 1 Page - International Rectifier

tên linh kiện IRF2805LPBF
Giải thích chi tiết về linh kiện  HEXFET Power MOSFET
PDF  11 Pages
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nhà sản xuất  IRF [International Rectifier]
Trang chủ  http://www.irf.com
Logo IRF - International Rectifier

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Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
135
†
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
96
†
A
IDM
Pulsed Drain Current

700
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
380
mJ
EAS (6 sigma)
Single Pulse Avalanche Energy Tested Value
ˆ
1220
IAR
Avalanche Current

See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
‡
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
2.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
HEXFET® Power MOSFET
Absolute Maximum Ratings
VDSS = 55V
RDS(on) = 4.7mΩ
ID = 135A
†
11/16/04
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 95944
HEXFET(R) is a registered trademark of International Rectifier.
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this product are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
S
D
G
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
Typical Applications
l
Climate Control
l
ABS
l
Electronic Braking
l
Windshield Wipers
l
Lead-Free
IRF2805SPbF
IRF2805LPbF
D2Pak
IRF2805SPbF
TO-262
IRF2805LPbF
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
RθJA
Junction-to-Ambient(PCB Mounted, steady state)**
–––
40
°C/W


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