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PBYR1040F bảng dữ liệu(PDF) 1 Page - NXP Semiconductors |
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PBYR1040F bảng dữ liệu(HTML) 1 Page - NXP Semiconductors |
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1 / 6 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR1045F, PBYR1045X series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching V R = 40 V/ 45 V • Reverse surge capability • High thermal cycling performance I F(AV) = 10 A • Isolated mounting tab V F ≤ 0.59 V GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1045F series is supplied in the SOD100 package. The PBYR1045X series is supplied in the SOD113 package. PINNING SOD100 SOD113 PIN DESCRIPTION 1 cathode 2 anode tab isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PBYR10 40F 45F PBYR10 40X 45X V RRM Peak repetitive reverse - 40 45 V voltage V RWM Working peak reverse - 40 45 V voltage V R Continuous reverse voltage T hs ≤ 95 ˚C - 40 45 V I F(AV) Average rectified forward square wave; δ = 0.5; T hs ≤ 112 ˚C - 10 A current I FRM Repetitive peak forward square wave; δ = 0.5; T hs ≤ 112 ˚C - 20 A current I FSM Non-repetitive peak forward t = 10 ms - 100 A current t = 8.3 ms - 110 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C k a 12 12 case 12 case July 1998 1 Rev 1.200 |
Số phần tương tự - PBYR1040F |
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Mô tả tương tự - PBYR1040F |
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