FDS4953 Rev D1(W)

Typical Characteristics

0

2

4

6

8

10

0

2

4

6

8

10

Q

I

V

-10V

-15V

0

100

200

300

400

500

600

700

800

0

5

10

15

20

25

30

-V

DS

, DRAIN TO SOURCE VOLTAGE (V)

C

ISS

C

OSS

C

RSS

f = 1 MHz

V

GS

= 0 V

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1

1

10

100

-V

DS

, DRAIN-SOURCE VOLTAGE (V)

DC

10s

1s

100ms

100

µ s

R

DS(ON)

LIMIT

V

SINGLE PULSE

JA

T

10ms

1ms

0

10

20

30

40

50

0.001

0.01

0.1

1

10

100

t

1

, TIME (sec)

SINGLE PULSE

JA

= 135°C/W

T

A

= 25°C

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

P(pk)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.