HT8KC5

60V Nch+Nch Power MOSFET

Datasheet

l

lOutline

VDSS

60V

RDS(on)(Max.)

90mΩ

ID

±10A

HSMT8

PD

13W

l

lFeatures

l

lInner circuit

1) Low on - resistance

2) High Power small mold Package (HSMT8)

3) Pb-free plating ; RoHS compliant

4) Halogen Free

l

lPackaging specifications

Type

Packing

Embossed

Tape

l

lApplication

Reel size (mm)

330

Switching

Tape width (mm)

12

Quantity (pcs)

3000

Taping code

TB1

Marking

HT8KC5

l

lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2>

Parameter

Symbol

Value

Unit

Drain - Source voltage

VDSS

60

V

Continuous drain current

Tc = 25°C

ID*1

±10

A

Ta = 25°C

ID

±3.5

A

Pulsed drain current

IDP*2

±14

A

Gate - Source voltage

VGSS

±20

V

Avalanche current, single pulse

IAS*3

3.5

A

Avalanche energy, single pulse

EAS*3

1.0

mJ

Power dissipation (total)

PD*1

13

W

PD*4

2.0

Junction temperature

Tj

150

℃

Operating junction and storage temperature range

Tstg

-55 to +150

℃

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