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MOC3063M. bảng dữ liệu(PDF) 3 Page - ON Semiconductor |
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MOC3063M. bảng dữ liệu(HTML) 3 Page - ON Semiconductor |
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3 / 12 page ![]() MOC3061M, MOC3062M, MOC3063M, MOC3162M, MOC3163M www.onsemi.com 3 ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Symbol Parameter Test Conditions Device Min Typ Max Unit INDIVIDUAL COMPONENT CHARACTERISTICS EMITTER VF Input Forward Voltage IF = 30 mA All − 1.3 1.5 V IR Reverse Leakage Current VR = 6 V All − 0.005 100 mA DETECTOR IDRM1 Peak Blocking Current, Either Direction VDRM = 600 V, IF = 0 (Note 1) MOC306XM − 10 500 nA MOC316XM − 10 100 dv/dt Critical Rate of Rise of Off−State Voltage IF = 0 (Note 2) MOC306XM 600 1500 − V/ ms MOC316XM 1000 − − TRANSFER CHARACTERISTICS IFT LED Trigger Current (Rated IFT) Main Terminal Voltage = 3 V (Note 3) MOC3061M − − 15 mA MOC3062M MOC3162M − − 10 MOC3063M MOC3163M − − 5 VTM Peak On−State Voltage, Either Direction ITM = 100 mA peak, IF = rated IFT All − 1.8 3.0 V IH Holding Current, Either Direction All − 500 − mA ZERO CROSSING CHARACTERISTICS VINH Inhibit Voltage (MT1−MT2 Voltage Above Which Device will not Trigger) IF = rated IFT MOC3061M MOC3062M MOC3063M − 12 20 V MOC3162M MOC3163M − 12 15 IDRM2 Leakage in Inhibited State IF = rated IFT, VDRM = 600 V, off−state All − − 2 mA ISOLATION CHARACTERISTICS VISO Isolation Voltage (Note 4) f = 60 Hz, t = 1 Minute 4170 − − VACRMS RISO Isolation Resistance VI−O = 500 VDC − 1011 − W CISO Isolation Capacitance V = 0 V, f = 1 MHz − 0.2 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Test voltage must be applied within dv/dt rating. 2. This is static dv/dt. Commutating dv/dt is a function of the load−driving thyristor(s) only. 3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT (15 mA for MOC3061M, 10 mA for MOC3062M and MOC3162M, 5 mA for MOC3063M and MOC3163M) and absolute maximum IF (60 mA). 4. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are common. |
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