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FDFMA2P853 bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor

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Giải thích chi tiết về linh kiện  Integrated P-Channel PowerTrench짰 MOSFET and Schottky Diode
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©2006 Fairchild Semiconductor Corporation
FDFMA2P853 Rev. D (W)
1
FDFMA2P853
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
General Description
Features
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance and an independently
connected low forward voltage schottky diode for minimum
conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.
MOSFET:
-3.0 A, -20V. RDS(ON) = 120 m
@ VGS = -4.5 V
RDS(ON) = 160 m
@ VGS = -2.5 V
RDS(ON) = 240 m
@ VGS = -1.8 V
Schottky:
VF < 0.46 V @ 500 mA
Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
RoHS Compliant
Absolute Maximum Ratings T
A = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDSS
MOSFET Drain-Source Voltage
-20
V
VGSS
MOSFET Gate-Source Voltage
8V
ID
Drain Current -Continuous
(Note 1a)
-Pulsed
-2.2
A
-6
VRRM
Schottky Repetitive Peak Reverse voltage
30V
IO
Schottky Average Forward Current
(Note 1a)
1
A
PD
Power dissipation for Single Operation
(Note 1a)
Power dissipation for Single Operation
(Note 1b)
1.4
W
0.7
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
oC
R JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
86
oC/W
R JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
173
R JA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
86
R JA
Thermal Resistance, Junction-to-Ambient
(Note 1d)
140
Device Marking
Device
Reel Size
Tape Width
Quantity
.853
FDFMA2P853
7inch
8mm
3000 units
5
1
6
2
3
4
MicroFET
C
A
G
NC D
S
PIN
C
G
S
A
NC
D
C
D
July
2006


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