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IRLR3705ZPBF bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRLR3705ZPBF bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRLR/U3705ZPbF 2 www.irf.com S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 6.5 8.0 m Ω ––– ––– 11 ––– ––– 12 VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V gfs Forward Transconductance 89 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 44 66 Qgs Gate-to-Source Charge ––– 13 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 22 ––– td(on) Turn-On Delay Time ––– 17 ––– tr Rise Time ––– 150 ––– td(off) Turn-Off Delay Time ––– 33 ––– ns tf Fall Time ––– 70 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 2900 ––– Coss Output Capacitance ––– 420 ––– Crss Reverse Transfer Capacitance ––– 230 ––– pF Coss Output Capacitance ––– 1550 ––– Coss Output Capacitance ––– 320 ––– Coss eff. Effective Output Capacitance ––– 500 ––– Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 42 (Body Diode) A ISM Pulsed Source Current ––– ––– 360 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 21 42 ns Qrr Reverse Recovery Charge ––– 14 28 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 16V VGS = -16V VDS = VGS, ID = 250µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VDS = 44V VDS = 25V, ID = 42A ID = 42A Conditions VGS = 5.0V e VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V f MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 42A, VGS = 0V e TJ = 25°C, IF = 42A, VDD = 28V di/dt = 100A/µs e Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 21A e VGS = 10V, ID = 42A e VGS = 5.0V, ID = 34A e VGS = 5.0V e VDD = 28V ID = 42A RG = 4.2 Ω |
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