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ST10100S bảng dữ liệu(PDF) 1 Page - SMC Diode Solutions Co. LTD |
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ST10100S bảng dữ liệu(HTML) 1 Page - SMC Diode Solutions Co. LTD |
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1 / 4 page ![]() Technical Data Data Sheet N1037, Rev. E China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com ST10100S ST10100S SCHOTTKY RECTIFIER Characteristics Symbol Condition Typ. Max. Units Forward Voltage Drop* VF1 @ 5A, Pulse, TJ = 25 C @ 10A, Pulse, TJ = 25 C 0.53 0.65 - 0.68 V VF2 @ 5A, Pulse, TJ = 125 C @ 10A, Pulse, TJ = 125 C 0.49 0.60 - 0.62 V Reverse Current* IR1 @VR = rated VR TJ = 25 C 0.01 0.25 mA Reverse Current* IR2 @VR = rated VR TJ = 125 C 1.80 36 mA * Pulse width < 300 µs, duty cycle < 2% Features Circuit Diagram Applications Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR - 100 V Average Rectified Forward Current IF (AV) 50% duty cycle @TL=125°C, rectangular wave form 10 A Peak One Cycle Non-Repetitive Surge Current IFSM 8.3ms, Half Sine pulse, TJ = 25 C 150 A Electrical Characteristics: 150C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Trench MOS Schottky technology Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Switching power supply Converters Free-Wheeling diodes Reverse battery protection TO-277B |
Số phần tương tự - ST10100S |
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Mô tả tương tự - ST10100S |
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