Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting

surface of the drain pins RθJC is guaranteed by design while RθJA is determined by the user’s board design.

(a) RθJA = 250°C/W when mounted on a 0.02 in

2 pad of 2oz. copper.

(b) RθJA = 270°C/W when mounted on a 0.001 in

2 pad of 2oz. copper.

2. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V, ID = –250 µA

–30

V

∆BVDSS

∆TJ

Breakdown Voltage Temperature Coefficient

ID = –250 µA, Referenced to 25°C

–17

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = –24 V, VGS = 0 V

–1

µA

IGSS

Gate–Body Leakage

VGS = ±25 V, VDS = 0 V

±100

nA

On Characteristics (Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = –250 µA

–0.8

–2.0

–2.5

V

∆VGS(th)

∆TJ

Gate Threshold Voltage

Temperature Coefficient

ID = –250 µA, Referenced to 25°C4

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

g

m

180

300

150

250

VGS = –10 V, ID = –1.3 A

VGS = –4.5 V, ID = –1.1 A

Ω

FS

Forward Transconductance

VDS = –5 V, ID = –0.9 A

2.0

S

Dynamic Characteristics

Ciss

Input Capacitance

VDS = –15 V, VGS = 0 V, f = 1.0 MHz

150

pF

Coss

Output Capacitance

40

pF

Crss

Reverse Transfer Capacitance

20

pF

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

VDD = –10 V, ID = –1 A,

VGS = –10 V, RGEN = 6 Ω

48

ns

tr

Turn–On Rise Time

15

28

ns

td(off)

Turn–Off Delay Time

10

18

ns

tf

Turn–Off Fall Time

12

ns

Qg

Total Gate Charge

VDS = –10V, ID = –0.9 A,

VGS = –4.5 V

1.4

1.9

nC

Qgs

Gate–Source Charge

0.5

nC

Qgd

Gate–Drain Charge

0.5

nC

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

–0.42

A

VSD

Drain–Source Diode Forward Voltage

VGS = 0 V, IS = –0.42 A

(Note 2)

–0.8

–1.2

V

trr

Diode Reverse Recovery Time

IF = –3.9 A,

dIF/dt = 100 A/µs

17

ns

Qrr

Diode Reverse Recovery Charge

7

nC

P-Channel 30 V (D-S) MOSFET

UMW

R

FDN352

www.umw-ic.com

2

UTD Semiconductor Co.,Limited