©2002 Fairchild Semiconductor Corporation

Rev. B, July 2002

NPN Epitaxial Silicon Transistor

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

30

V

Collector-Base Voltage

60

V

Emitter-Base Voltage

5.0

V

Collector Current

- Continuous

1.0

A

Operating and Storage Junction Temperature Range

-55 ~ +150

°C

2N4953

NPN General Purpose Amplifier

• This device designed for use as general purpose amplifier and

switches requiring collector currents to 500mA.

• Sourced from Process 10.

TO-92

1. Emitter 2. Collector 3. Base

1