AM29LV640MH datasheet(61/62 Pages) AMD

61 / 62 page

December 14, 2005

Am29LV640MH/L

DA TA SH EET

REVISION SUMMARY

Revision A (March 19, 2002)

Initial release as abbreviated Advance Information

data sheet. This document contains information that

was previously released in publication number 25301.

Ordering Information

The package marking for the Fortified BGA option has

been updated.

Physical Dimensions

Added drawing that shows both TS056 and TSR056

specifications.

Revision B (April 26, 2002)

Expanded data sheet to full specification version.

Revision C (May 23, 2002)

Changed packaging from 63-ball FBGA to 64-ball For-

tified BGA. Changed Block Diagram: Moved V

IO from

RY/BY# to Input/Output Buffers. Changed note about

WP#/ACC pin to indicate internal pullup to V

CC. Modi-

fied Table 4: Sector Group Protection/Unprotection Ad-

dress Table. Changed 47h Address data from 0004h

to 0001h in Table 9.

Revision D (August 8, 2002)

Alternate CE# Controlled Erase and Program

Operations

Added tRH parameter to table.

Erase and Program Operations

Added tBUSY parameter to table.

TSOP and BGA PIN Capacitance

Added the FBGA package.

Program Suspend/Program Resume Command

Sequence

Changed 15

μs typical to maximum and added 5 μs

typical.

Erase Suspend/Erase Resume Commands

Changed typical from 20

μs to 5 μs and added a maxi-

mum of 20

μs.

Special package handling instructions

Modified the special handling wording.

DC Characteristics table

Deleted the Iacc specification row.

CFI

Changed text in the third paragraph of CFI to read

“reading array data.”

Revision D+1 (September 10, 2002)

Product Selector Guide

Added Note 2.

Ordering Information

Added Note 1.

Sector Erase Command Sequence

Deleted statement that describes the outcome of

when the Embedded Erase operation is in progress.

Revision E (December 5, 2002)

Product Selector Guide and Read-Only

Characteristics

Added a 30 ns option to t

PACC and tOE standard for the

112R and 120R speed options.

Customer Lockable: SecSi Sector NOT

Programmed or Protected at the factory.

Added second bullet, SecSi sector-protect verify text

and figure 3.

SecSi Sector Flash Memory Region, and Enter

SecSi Sector/Exit SecSi Sector Command

Sequence

Noted that the ACC function and unlock bypass modes

are not available when the SecSi sector is enabled.

Byte/Word Program Command Sequence, Sector

Erase Command Sequence, and Chip Erase Com-

mand Sequence

Noted that the SecSi Sector, autoselect, and CFI

functions are unavailable when a program or erase

operation is in progress.

Common Flash Memory Interface (CFI)

Changed CFI website address

Figure 6. Program Suspend/Program Resume

Change wait time to 15

μs.

CMOS Compatible

Added ILR row to table. Changed VIH1 and VIH2 mini-

mum to 1.9. Removed typos in notes.

Hardware Reset, CMOS Tables, Erase and Program

Operations, Temporary Sector Unprotect, and

Alternate CE# Controlled Erase and Program

Operations

Added Note.

Revision E+1 (February 16, 2003)

Distinctive Characteristics

Corrected performance characteristics.

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