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AM29LV256ML103REF bảng dữ liệu(PDF) 63 Page - Advanced Micro Devices

tên linh kiện AM29LV256ML103REF
Giải thích chi tiết về linh kiện  256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
PDF  69 Pages
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nhà sản xuất  AMD [Advanced Micro Devices]
Trang chủ  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV256ML103REF bảng dữ liệu(HTML) 63 Page - Advanced Micro Devices

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December 16, 2005
Am29LV256M
61
D A TA SH EE T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC. Programming specifications assume that
all bits are programmed to 00h.
2. Maximum values are measured at VCC = 3.0, worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
11 for further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
TSOP PIN AND BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A = 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h programming
prior to erasure (Note 6)
Chip Erase Time
256
512
sec
Single Byte/Word
Program Time (Note 3)
Byte
60
600
µs
Excludes system level
overhead (Note 7)
Word
60
600
µs
Accelerated Single Byte/Word
Program Time
(Note 3)
Byte
54
540
µs
Word
54
540
µs
Total Write Buffer Program
Time (Note 4)
240
1200
µs
Effective Write Buffer Program
Time (Note 5)
Per Byte
7.5
38
µs
Per Word
15
75
µs
Total Accelerated Write Buffer
Program Time (Note 4)
200
1040
µs
Effective Accelerated Write
Buffer Program Time
(Note 5)
Per Byte
6.25
33
µs
Per Word
12.5
65
µs
Chip Program Time
252
584
sec
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN = 0
TSOP
6
7.5
pF
BGA
4.2
5
pF
C
OUT
Output Capacitance
V
OUT = 0
TSOP
8.5
12
pF
BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN = 0
TSOP
7.5
9
pF
BGA
3.9
4.7
pF



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