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M41000002W bảng dữ liệu(PDF) 41 Page - Advanced Micro Devices

tên linh kiện M41000002W
Giải thích chi tiết về linh kiện  32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
PDF  66 Pages
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nhà sản xuất  AMD [Advanced Micro Devices]
Trang chủ  http://www.amd.com
Logo AMD - Advanced Micro Devices

M41000002W bảng dữ liệu(HTML) 41 Page - Advanced Micro Devices

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40
Am41DL32x8G
September 5, 2002
PR ELI M I NARY
Notes:
1. The I
CC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum I
CC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN = VSS to VCC
–1.0
1.0
µA
I
LO
Output Leakage Current
CE1#s = V
IH, CE2s = VIL or OE# =
V
IH or WE# = VIL, VIO= VSS to VCC
–1.0
1.0
µA
ICC
Operating Power Supply Current
I
IO = 0 mA, CE1#s = VIL, CE2s =
WE# = V
IH, VIN = VIH or VIL
3mA
I
CC1s
Average Operating Current
Cycle time = 1 µs, 100% duty,
I
IO = 0 mA, CE1#s ≤ 0.2 V,
CE2
≥ V
CC – 0.2 V, VIN ≤ 0.2 V or
V
IN ≥ VCC – 0.2 V
3mA
I
CC2s
Average Operating Current
Cycle time = Min., IIO = 0 mA,
100% duty, CE1#s = V
IL, CE2s =
V
IH, VIN = VIL = or VIH
30
mA
V
OL
Output Low Voltage
I
OL = 2.1 mA
0.4
V
V
OH
Output High Voltage
I
OH = –1.0 mA
2.4
V
I
SB
Standby Current (TTL)
CE1#s = V
IH, CE2 = VIL, Other
inputs = V
IH or VIL
0.3
mA
I
SB1
Standby Current (CMOS)
CE1#s
≥ V
CC – 0.2 V, CE2 ≥ VCC –
0.2 V (CE1#s controlled) or CE2
≤
0.2 V (CE2s controlled), CIOs =
V
SS or VCC, Other input = 0 ~ VCC
15
µA



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