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M41000002L bảng dữ liệu(PDF) 48 Page - Advanced Micro Devices

tên linh kiện M41000002L
Giải thích chi tiết về linh kiện  32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
PDF  66 Pages
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nhà sản xuất  AMD [Advanced Micro Devices]
Trang chủ  http://www.amd.com
Logo AMD - Advanced Micro Devices

M41000002L bảng dữ liệu(HTML) 48 Page - Advanced Micro Devices

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September 5, 2002
Am41DL32x8G
47
PR ELI M I NARY
AC CHARACTERISTICS
Flash Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
Parameter
Speed Options
Unit
JEDEC
Std
Description
70
85
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
85
ns
t
AVWL
t
AS
Address Setup Time (WE# to Address)
Min
0
ns
t
ASO
Address Setup Time to OE# or
CE#f Low During Toggle Bit
Polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time (WE# to Address)
Min
45
ns
t
AHT
Address Hold Time From CE#f or OE# High During Toggle Bit
Polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
35
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
tOEH
OE# Hold Time
Read
Min
0
ns
Toggle and Data# Polling
Min
10
ns
t
OEPH
Output Enable High During Toggle Bit Polling
Min
20
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write (OE# High to CE#f Low)
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time (CE#f to WE#)
Min
0
ns
t
ELWL
t
CS
CE#f Setup Time (WE# to CE#f)
Min
0
ns
t
EHWH
t
WH
WE# Hold Time (CE#f to WE#)
Min
0
ns
t
WHEH
t
CH
CE#f Hold Time (CE#f to WE#)
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
30
35
ns
t
ELEH
t
CP
CE#f Pulse Width
Min
30
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
SR/W
Latency Between Read and Write Operations
Min
0
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Byte
Typ
5
µs
Word
Typ
7
t
WHWH1
t
WHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
t
VCS
V
CCf Setup Time (Note 1)
Min
50
µs
t
RB
Write Recovery Time From RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid To RY/BY# Delay
Max
90
ns



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