This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 25262

Rev: C Amendment/4

Issue Date: September 12, 2006

Refer to AMD’s Website (www.amd.com) for the latest information.

DATA SHEET

Am29LV065MU

64 Megabit (8 M x 8-Bit) MirrorBit

™ 3.0 Volt-only

Uniform Sector Flash Memory with VersatileI/O

™ Control

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

Single power supply operation

— 3 volt read, erase, and program operations

VersatileI/O

™ control

— Device generates and tolerates data voltages on CE#

and DQ inputs/outputs as determined by the voltage

on the V

Manufactured on 0.23 µm MirrorBit process

technology

SecSi

™ (Secured Silicon) Sector region

— 256-byte sector for permanent, secure identification

through an 16-byte random Electronic Serial Number,

accessible through a command sequence

— May be programmed and locked at the factory or by

the customer

Flexible sector architecture

— One hundred twenty-eight 64 Kbyte sectors

Compatibility with JEDEC standards

— Provides pinout and software compatibility for

single-power supply flash, and superior inadvertent

write protection

Minimum 100,000 erase cycle guarantee per sector

20-year data retention at 125

°C

PERFORMANCE CHARACTERISTICS

High performance

— 90 ns access time

— 25 ns page read times

— 0.5 s typical sector erase time

— 11 µs typical effective write buffer byte programming

time: 32-byte write buffer reduces overall

programming time for multiple-byte updates

— 8-byte read page buffer

— 32-byte write buffer

Low power consumption (typical values at 3.0 V,

5MHz)

— 30 mA typical active read current

— 50 mA typical erase/program current

— 1 µA typical standby mode current

Package options

— 48-pin TSOP

— 63-ball FBGA

SOFTWARE & HARDWARE FEATURES

Software features

— Program Suspend & Resume: read other sectors

before programming operation is completed

— Erase Suspend & Resume: read/program other

sectors before an erase operation is completed

— Data# polling & toggle bits provide status

— Unlock Bypass Program command reduces overall

multiple-byte programming time

— CFI (Common Flash Interface) compliant: allows host

system to identify and accommodate multiple flash

devices

Hardware features

— Sector Group Protection: hardware method of

preventing write operations within a sector group

— Temporary Sector Unprotect: V

changing code in locked sectors

— ACC (high voltage) pin accelerates programming

time for higher throughput during system production

— Hardware reset pin (RESET#) resets device

— Ready/Busy# pin (RY/BY#) detects program or erase

cycle completion

This product has been retired and is not available for designs. For new and current designs, S29GL064A supersedes Am29LV065MU and is the factory-recom-

mended migration path. Please refer to the S29GL064A datasheet for specifications and ordering information. Availability of this document is retained for reference

and historical purposes only.