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L640DU21NF bảng dữ liệu(PDF) 50 Page - Advanced Micro Devices

tên linh kiện L640DU21NF
Giải thích chi tiết về linh kiện  64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO??Control
PDF  57 Pages
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nhà sản xuất  AMD [Advanced Micro Devices]
Trang chủ  http://www.amd.com
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L640DU21NF bảng dữ liệu(HTML) 50 Page - Advanced Micro Devices

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48
Am29LV640D/Am29LV641D
22366C6 January 22, 2007
D A TA
SH EET
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°C, V
CC = 3.0 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
10 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)Max (Note 2)
Unit
Comments
Sector Erase Time
0.9
15
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
115
sec
Word Program Time
11
300
µs
Excludes system level
overhead (Note 5)
Accelerated Word Program Time
7
210
µs
Chip Program Time (Note 3)
48
144
sec
Description
Min
Max
Input voltage with respect to V
SS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN = 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT = 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN = 0
7.5
9
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C10
Years
125
°C20
Years



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