November 1994

2

Philips Semiconductors

Product specification

NPN silicon planar epitaxial microwave

power transistor

LLE18100X

FEATURES

• Diffused emitter ballasting resistors

providing excellent current sharing

and withstanding a high VSWR

• Interdigitated structure provides

high emitter efficiency

• Gold metallization realizes very

good stability of the characteristics

and excellent lifetime

• Multicell geometry gives good

balance of dissipated power and

low thermal resistance

• Internal input prematching ensures

good stability and allows an easier

design of wideband circuits.

PINNING - SOT437A

PIN

DESCRIPTION

1

collector

2

base

3

emitter connected to flange

DESCRIPTION

NPN silicon planar epitaxial

microwave power transistor in a

SOT437A glued cap metal ceramic

flange package, with emitter

connected to flange.

APPLICATIONS

Intended for use in common emitter,

class AB power amplifiers in CW

conditions for professional

applications at 1.85 GHz.

QUICK REFERENCE DATA

amplifier.

PIN CONFIGURATION

MODE OF

OPERATION

f

(GHz)

(V)

(A)

(W)

(dB)

(

Ω)

class AB (CW)

1.85

24

0.1

≥ 9

≥ 8

see Figs 8

and 9

handbook, halfpage

e

c

b

MBB012

Fig.1 Simplified outline and symbol.

fpage

MBC045

1

2

3

Top view

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All

persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.