AM29F800B datasheet(3/44 Pages) AMD

3 / 44 page

DATA SHEET

This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21504

Rev: E Amendment: 5

Issue Date: November 2, 2006

Am29F800B

8 Megabit (1 M x 8-Bit/512 K x 16-Bit)

CMOS 5.0 Volt-only, Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— 5.0 Volt-only operation for read, erase, and

program operations

— Minimizes system level requirements

■ Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F800 device

■ High performance

— Access times as fast as 55 ns

■ Low power consumption (typical values at

5 MHz)

— 1 µA standby mode current

— 20 mA read current (byte mode)

— 28 mA read current (word mode)

— 30 mA program/erase current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

fifteen 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

fifteen 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

— Sectors can be locked via programming

equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Top or bottom boot block configurations

available

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Minimum 1,000,000 program/erase cycles per

sector guaranteed

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

— 48-pin TSOP

— 44-pin SO

— 48-ball FBGA

— Known Good Die (KGD)

(see publication number 21631)

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power-supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting

program or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

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