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KBJ1010 bảng dữ liệu(PDF) 1 Page - ASEMI TECHNOLOGY., LTD

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Giải thích chi tiết về linh kiện  1 A Single-Phase Silicon Bridge Rectifier Rectifier Reverse Voltage 50 to 1000V
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  KBJ1010 Datasheet HTML 1Page - ASEMI TECHNOLOGY., LTD KBJ1010 Datasheet HTML 2Page - ASEMI TECHNOLOGY., LTD  
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background image
1010
10
1006
1004
1002
1001
10005
10.0
1010
1008
1006
1004
1002
1001
10005
0
0
0
KBJ
KBJ1 005 thru KBJ1 10
1 A Single-Phase Silicon Bridge Rectifier
Rectifier Reverse Voltage 50 to 1000V
Features
Mechanical Data
Case : Molded plastic body over passivated junctions
Terminals : Plated leads solderable per MIL-STD-750,
Method 2026
Polarity : Polarity symbols molded on body
Mounting Position : Any(3)
Mounting Torque : 5 in-lbs max.
Weight : 0.26 ounce, 7.0 grams (approx)
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High case dielectric strength of 1500VRMS
Ideal for printed circuit boards
High surge current capability
Dimensions in millimeters(1mm =0.0394")
+
_
~ ~
+
17.5 0.5
+
30.0 0.3
5
+
20.0 0.3
+
4 0.2
+
2.2 0.2
+
2.5 0.2
+
1.0 0.1
+
10 0.2
+
7.5 0.2
+
4.6 0.2
+
3.6 0.2
+
3.5 0.2
+
3.2 0.2
+
0.7 0.1
+
11.0 0.2
+
2.7 0.2
+
7.5 0.2
Maximum Ratings & Thermal Characteristics
Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.
For Capacitive load derate current by 20%.
Parameter
Symbol
unit
Maximum repetitive peak reverse voltage
Maximum RMS bridge input voltage
Maximum DC blocking voltage
Maximum average forward
current at Tc=100 C
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
Rating for fusing ( t<8.3ms)
Typical thermal resistance per element (note 1)
Operating junction and storage temperature
range
Electrical Characteristics
Rating at 25 C ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.
For Capacitive load derate by 20 %.
Parameter
Symbol
Unit
Maximum instantaneous forward voltage drop
per leg at 7.5 A
Maximum DC reverse current at rated TA =25 C
DC blocking voltage per element
TA =125 C
(with heatsink note1 )
rectified
(without heatsink)
VRRM
VRMS
VDC
IF(AV)
I t
2
IFSM
RthJC
TJ,
TSTG
VF
IR
50
100
200
400
800
1000
600
35
70
140
280
420
560
700
50
100
200
400
600
800
1000
240
0.8
-55 to + 150
1.05
10.0
500
V
V
V
A
A
V
A
2
sec
3.2
240
A
C / W
KBJ
KBJ
Notes: (1) Device mounted on 300mm x 300mm x 1.6mm copper plate heatsink.
C
KBJ
KBJ
KBJ
KBJ
KBJ
KBJ
KBJ
KBJ
KBJ
KBJ
KBJ
08
KBJ
.
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