KM110BSLASH2 datasheet(3/6 Pages) PHILIPS

3 / 6 page

November 1994

Philips Semiconductors

Preliminary speciﬁcation

Magnetic ﬁeld sensor

KM110B/2

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Maximum operating temperature of the thin-film permalloy.

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tamb =25 °C; VCC = 5 V unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCC

DC supply voltage

−

Ptot

total power dissipation

up to Tamb = 130 °C;

see Fig.5

−

120

Tstg

storage temperature

note 1

−40

+150

°C

Tbridge

bridge operating temperature

−40

+150

°C

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

180

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

magnetic ﬁeld strength

note 1

−2.2

−

+2.2

kA/m

sensitivity

open circuit; notes 2 and 3

2.9

3.6.

4.4

TCVO

temperature coefﬁcient of

output voltage

VCC = −5V;

Tamb = −25 to +125 °C

−−0.4

−

%/K

ICC = 3 mA;

Tamb = −25 to +125 °C

−−0.1

−

%/K

Rbridge

bridge resistance

1.6

−

2.6

Ω

TCRbridge

temperature coefﬁcient of

bridge resistance

Tbridge = −25 to +125 °C

−

0.3

−

%/K

Voffset

offset voltage

−0.5

−

+0.5

mV/V

TCVoffset

temperature coefﬁcient of

offset voltage

Tbridge =−25 to +125 °C

−5

±1.5

(

µV/V)/K

linearity deviation of output

voltage

Hy= 0to ±1 kA/m

−−

0.5

⋅FS

Hy= 0to ±1.6 kA/m

−−

1.7

⋅FS

Hy =0to ±2 kA/m

−−

2.0

⋅FS

hysteresis of output voltage

−−

0.5

⋅FS

operating frequency

note 4

−

MHz

mV V

⁄

kA m

⁄

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