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MMDT4413 bảng dữ liệu(PDF) 2 Page - Diodes Incorporated

tên linh kiện MMDT4413
Giải thích chi tiết về linh kiện  COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  5 Pages
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nhà sản xuất  DIODES [Diodes Incorporated]
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MMDT4413 bảng dữ liệu(HTML) 2 Page - Diodes Incorporated

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DS30121 Rev. 8 - 2
2 of 5
www.diodes.com
MMDT4413
© Diodes Incorporated
Electrical Characteristics, NPN 4401 Section @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
60
⎯
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
⎯
V
IC = 1.0mA, IB = 0
B
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
⎯
V
IE = 100μA, IC = 0
Collector Cutoff Current
ICEX
⎯
100
nA
VCE = 35V, VEB(OFF) = 0.4V
Base Cutoff Current
IBL
⎯
100
nA
VCE = 35V, VEB(OFF) = 0.4V
ON CHARACTERISTICS (Note 4)
DC Current Gain
hFE
20
40
80
100
40
⎯
⎯
⎯
300
⎯
⎯
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
0.40
0.75
V
IC = 150mA, IB = 15mA
B
IC = 500mA, IB
B
= 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.75
⎯
0.95
1.2
V
IC = 150mA, IB = 15mA
B
IC = 500mA, IB
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Ccb
⎯
6.5
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb
⎯
30
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
15
k
Ω
Voltage Feedback Ratio
hre
0.1
8.0
x 10
-4
Small Signal Current Gain
hfe
40
500
⎯
Output Admittance
hoe
1.0
30
μS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
250
⎯
MHz
VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
td
⎯
15
ns
Rise Time
tr
⎯
20
ns
VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA
Storage Time
ts
⎯
225
ns
Fall Time
tf
⎯
30
ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Electrical Characteristics, PNP 4403 Section @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
-40
⎯
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
⎯
V
IC = -1.0mA, IB = 0
B
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
⎯
V
IE = -100μA, IC = 0
Collector Cutoff Current
ICEX
⎯
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
Base Cutoff Current
IBL
⎯
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
ON CHARACTERISTICS (Note 4)
DC Current Gain
hFE
30
60
100
100
20
⎯
⎯
⎯
300
⎯
⎯
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -150mA, VCE = -2.0V
IC = -500mA, VCE = -2.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
-0.40
-0.75
V
IC = -150mA, IB = -15mA
B
IC = -500mA, IB
B
= -50mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.75
⎯
-0.95
-1.30
V
IC = -150mA, IB = -15mA
B
IC = -500mA, IB
B
= -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Ccb
⎯
8.5
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb
⎯
30
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.5
15
k
Ω
Voltage Feedback Ratio
hre
0.1
8.0
x 10
-4
Small Signal Current Gain
hfe
60
500
⎯
Output Admittance
hoe
1.0
100
μS
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
200
⎯
MHz
VCE = -10V, IC = -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
td
⎯
15
ns
Rise Time
tr
⎯
20
ns
VCC = -30V, IC = -150mA,
VBE(off) = -2.0V, IB1 = -15mA
Storage Time
ts
⎯
225
ns
Fall Time
tf
⎯
30
ns
VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
Notes:
4.
Short duration pulse test used to minimize self-heating effect.



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