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IRFZ44 bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

tên linh kiện IRFZ44
Giải thích chi tiết về linh kiện  N-channel enhancement mode TrenchMOS transistor
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nhà sản xuất  PHILIPS [NXP Semiconductors]
Trang chủ  http://www.nxp.com
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IRFZ44 bảng dữ liệu(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
N-channel enhancement mode
IRFZ44N
TrenchMOS
TM transistor
STATIC CHARACTERISTICS
T
j= 25˚C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
55
-
-
V
voltage
T
j = -55˚C
50
-
-
V
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2.0
3.0
4.0
V
T
j = 175˚C
1.0
-
-
V
T
j = -55˚C
-
-
4.4
I
DSS
Zero gate voltage drain current
V
DS = 55 V; VGS = 0 V;
-
0.05
10
µA
T
j = 175˚C
-
-
500
µA
I
GSS
Gate source leakage current
V
GS = ±10 V; VDS = 0 V
-
0.04
1
µA
T
j = 175˚C
-
-
20
µA
±V
(BR)GSS
Gate source breakdown voltage I
G = ±1 mA;
16
-
-
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 25 A
-
15
22
m
Ω
resistance
T
j = 175˚C
-
-
42
m
Ω
DYNAMIC CHARACTERISTICS
T
mb = 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS = 25 V; ID = 25 A
6
-
-
S
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
1350
1800
pF
C
oss
Output capacitance
-
330
400
pF
C
rss
Feedback capacitance
-
155
215
pF
Q
g
Total gate charge
V
DD = 44 V; ID = 50 A; VGS = 10 V
-
-
62
nC
Q
gs
Gate-cource charge
-
-
15
nC
Q
gd
Gate-drain (miller) charge
-
-
26
nC
t
d on
Turn-on delay time
V
DD = 30 V; ID = 25 A;
-
18
26
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 10 Ω
-
5075ns
t
d off
Turn-off delay time
Resistive load
-
40
50
ns
t
f
Turn-off fall time
-
30
40
ns
L
d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
-
49
A
current
I
DRM
Pulsed reverse drain current
-
-
160
A
V
SD
Diode forward voltage
I
F = 25 A; VGS = 0 V
-
0.95
1.2
V
I
F = 40 A; VGS = 0 V
-
1.0
-
t
rr
Reverse recovery time
I
F = 40 A; -dIF/dt = 100 A/µs;
-
47
-
ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 30 V
-
0.15
-
µC
February 1999
2
Rev 1.000



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