IRFZ24VS

IRFZ24VL

02/14/02

S

D

G

advanced processing techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and reliable device for

use in a wide variety of applications.

die sizes up to HEX-4. It provides the highest power capability and the

lowest possible on-resistance in any existing surface mount package. The

connection resistance and can dissipate up to 2.0W in a typical surface

mount application.

The through-hole version (IRFZ24VL) is available for low-profile applications.

Description

Absolute Maximum Ratings

Parameter

Max.

Units

‡

17

‡

12

A

Pulsed Drain Current

‡

68

Power Dissipation

44

W

Linear Derating Factor

0.29

W/°C

Gate-to-Source Voltage

± 20

V

Avalanche Current



17

A

Repetitive Avalanche Energy



4.4

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ‡

4.2

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

IRFZ24VS

TO-262

IRFZ24VL

www.irf.com

1

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

3.4

Junction-to-Ambient (PCB Mounted)**

–––

40

Thermal Resistance

°C/W

PD - 94182