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ISG2012 bảng dữ liệu(PDF) 3 Page - Inchange Semiconductor Company Limited |
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ISG2012 bảng dữ liệu(HTML) 3 Page - Inchange Semiconductor Company Limited |
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3 / 3 page ![]() ISG2012 eq STGW40H120DF2 Trench gate Field-Stop IGBT www.iscsemi.com 2023-10-16 3 SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT td(on) Turn-on Delay Time VGE = 15V, IC= 40A, VCE = 600V, RG=10Ω TJ=25℃ -- 280 -- ns tr Turn-on Rise Time -- 60 -- ns td(off) Turn-off Delay Time -- 260 -- ns tf Turn-off Fall Time -- 270 -- ns REVERSE DIODE CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT IF Continuous Forward Current TC=100℃ 40 -- -- A IFM Maximum Forward Current TC=100℃ 120 -- -- A VF Forward Voltage IF=40A -- 2.7 3.4 V trr Reverse Recovery Time IF=1A,VR=30V,di/dt=200A/us -- 55 -- ns Product Disclaimer ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. |
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