BZD142 datasheet(3/8 Pages) PHILIPS

3 / 8 page

2000 Dec 19

Philips Semiconductors

Preliminary speciﬁcation

ZenBlockTM; zener with integrated blocking diode

BZD142

ELECTRICAL CHARACTERISTICS ZENER/TVS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. To complete the type number the suffix is added to the basic type number, e.g. BZD142-68.

2. Non-repetitive peak reverse current in accordance with

“IEC 60060-1, Section 8” (10/1000

µs pulse); see Fig.5.

ELECTRICAL CHARACTERISTICS BLOCKING CODE

Tj =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer

≥40 µm, see Fig.2.

For more information please refer to the

“General Part of associated Handbook”.

TYPE

NUMBER

SUFFIX(1)

WORKING VOLTAGE

TEMPERATURE

COEFFICIENT

TEST

CURRENT

CLAMPING

VOLTAGE

REVERSE CURRENT

at STAND-OFF

VOLTAGE

VZ (V) at IZ (see Fig.4)

SZ (%/K) at Itest

Itest (mA)

V(CL)R

(V)

at IRSM

(A)

(note 2)

IR (

µA)

at VR (V)

MIN.

NOM.

MAX.

MIN.

MAX.

0.07

0.12

94.4

106

0.07

0.12

103.5

0.97

0.07

0.12

114

0.88

100

0.07

0.12

126

0.79

100

110

0.07

0.12

139

0.72

110

121

0.07

0.12

152

0.66

120

108

120

132

0.07

0.12

167

0.60

100

130

117

130

143

0.07

0.12

185

0.54

110

150

135

150

165

0.07

0.12

204

0.49

120

160

149

160

171

0.07

0.12

224

0.45

130

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)R

reverse avalanche

breakdown voltage

IR = 0.1 mA

700

−−

reverse current

VR = 600 V

−−

µA

VR = 600 V; Tj = 150 °C

−−

100

µA

diode capacitance

f = 1 MHz; VR =0V;

see Fig.4

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

120

K/W

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